Datasheet > M65609E_07

M65609E_07

更新时间： 2022-12-22 22:18:20

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
14页	1222K
描述
Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

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M65609E_07 数据手册

Features

•

Operating Voltage: 3.3V

Access Time: 40 ns

Very Low Power Consumption

– Active: 160 mW (Max)

– Standby: 70 µW (Typ)

•

Wide Temperature Range: -55°C to +125°C

MFP 32 leads 400 Mils Width Package

TTL Compatible Inputs and Outputs

Asynchronous

Designed on 0.35µm Process

Rad Hard

No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm²

Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019

Quality grades: QML Q or V with SMD 5962-02501

128K x 8

3.3-volt

Description

Very Low Power

CMOS SRAM

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an

extremely low standby supply current with a fast access time at 40 ns. The high stabil-

ity of the 6T cell provides excellent protection against soft errors due to noise.

The M65609E is processed according to the methods of the latest revision of the MIL

PRF 38535 and ESCC 9000.

M65609E

It is produced on the same process as the MH1RT sea of gates series.

Rev. 4158I–AERO–07/07

12 3 4 5 6 7...14

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