Datasheet > M65609E_07

M65609E_07

更新时间： 2022-12-22 22:18:20

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
14页	1222K
描述
Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

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M65609E_07 数据手册

DC Parameters

DC Test Conditions

Parameter

Description

Minimum

Typical

Maximum

Unit

Input leakage

current

(1)

IIX

-1

–

µA

Output leakage

current

IOZ ⁽¹⁾

-1

–

µA

(2)

VOL

Output low voltage

Output high voltage

–

0.4

–

(3)

VOH

2.4

Gnd < Vin <

_CC, Gnd < Vout <

_CCmin. IOL = 4 mA.

_CCmin. IOH = -2 mA.

_CCOutput Disabled.

Consumption

Symbol

Description

65609E-40

Unit

Value

ICCSB ⁽¹⁾

Standby supply current

1.5

max

(2)

ICCSB₁

Dynamic operating

current

ICCOP ⁽³⁾

max

CS₁> VIH or CS₂< VIL and CS₁< VIL.

CS₁> V_CC- 0.3V or, CS₂< Gnd + 0.3V and CS₁< 0.2V

F = 1/T_AVAV, I_OUT= 0 mA, W = OE = VIH, Vin = Gnd or V_CC

V_CCmax.

M65609E

4158I–AERO–07/07

1 2 3 456 7 8...14

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