Datasheet > M65608E_09

M65608E_09

更新时间： 2022-12-22 22:18:20

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
16页	793K
描述
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM

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M65608E_09 数据手册

Features

• Operating Voltage: 5V

• Access Time: 30, 45 ns

• Very Low Power Consumption

– Active: 600 mW (Max)

– Standby: 1 µW (Typ)

• Wide Temperature Range: -55⋅C to +125⋅C

• 400 Mils Width Packages: FP32 and SB32

• TTL Compatible Inputs and Outputs

• Asynchronous

• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm²

• Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019

• QML Q and V with SMD 5962-89598

• ESCC with Specification 9301/047

Rad. Tolerant

128Kx8, 5-Volt

Very Low Power

CMOS SRAM

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

M65608E

The M65608E is processed according to the methods of the latest revision of the MIL

PRF 38535 or ESCC 9000.

12 3 4 5 6 7...16

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