MITSUBISHI LSIs
revision-P04, ' 98.12.16
M5M5V416BTP,RT
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
FEATURES
DESCRIPTION
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
The M5M5V416B is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416BTP,RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V416BTP (normal lead bend ty pe package)
, M5M5V416BRT (rev erse lead bend ty pe package) , both ty pes
are v ery easy to design a printed circuit board.
From the point of operating temperature, the f amily is div ided into
three v ersions; "Standard", "W-v ersion", and "I-v ersion". Those are
summarized in the part name table below.
Data retention supply v oltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology: 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
Activ e
Stand-by current Icc(PD), Vcc=3.0V
ty pical *
25°C 40°C 25°C 40°C 70°C 85°C
Version,
Power
Access time
max.
current
Icc1
(3.0V, ty p.)
Ratings (max.)
Part name
Operating
Supply
temperature
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
M5M5V416BTP , RT -70L
M5M5V416BTP , RT -85L
---
---
---
--- 20µA ---
2.7 ~ 3.6V
Standard M5M5V416BTP , RT -10L
M5M5V416BTP , RT -70H
0 ~ +70°C
M5M5V416BTP , RT -85H
M5M5V416BTP , RT -10H
M5M5V416BTP , RT -70LW
M5M5V416BTP , RT -85LW
0.3µA 1µA
1µA 3µA 10µA ---
2.7 ~ 3.6V
2.7 ~ 3.6V
---
---
---
--- 20µA 40µA
M5M5V416BTP , RT -10LW
40mA
(10MHz)
5mA
W-v ersion
-20 ~ +85°C M5M5V416BTP , RT -70HW
M5M5V416BTP , RT -85HW
0.3µA 1µA
1µA 3µA 10µA 20µA
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
M5M5V416BTP , RT -10HW
M5M5V416BTP , RT -70LI
M5M5V416BTP , RT -85LI
(1MHz)
---
---
---
--- 20µA 40µA
I-v ersion
M5M5V416BTP , RT -10LI
-40 ~ +85°CM5M5V416BTP , RT -70HI
M5M5V416BTP , RT -85HI
0.3µA 1µA
1µA 3µA 10µA 20µA
M5M5V416BTP , RT -10HI
* "ty pical" parameter is sampled, not 100% tested.
PIN CONFIGURATION
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A5
A6
A7
OE
A5
A6
A7
OE
Pin
Function
A1
A0
BC2
BC1
DQ16
DQ15
DQ14
DQ13
GND
Vcc
BC2
BC1
DQ16
DQ15
DQ14
DQ13
GND
Vcc
A0 ~ A17
Address input
S1
DQ1
DQ2
DQ3
DQ4
Vcc
S1
DQ1
DQ2
DQ3
DQ4
Vcc
DQ1 ~ DQ16 Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Power supply
S1
S2
9
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
DQ5
DQ6
DQ7
DQ8
WE
GND
DQ5
DQ6
DQ7
DQ8
WE
W
DQ12
DQ11
DQ10
DQ9
S2
DQ12
DQ11
DQ10
DQ9
S2
OE
BC1
BC2
Vcc
A15
A15
A8
A8
A14
A14
A9
A9
A13
A13
A10
A10
GND
Ground supply
A12
A12
A11
A11
A16
A16
A17
A17
Outline: 44P3W-H/J
NC: No Connection
44P3W-H
44P3W-J
1
MITSUBISHI ELECTRIC