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M58WR128FT80ZB6T PDF预览

M58WR128FT80ZB6T

更新时间: 2024-11-14 04:32:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器
页数 文件大小 规格书
86页 1412K
描述
8MX16 FLASH 1.8V PROM, 80ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, VFBGA-56

M58WR128FT80ZB6T 数据手册

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M58WR128FT  
M58WR128FB  
128 Mbit (8Mb x 16, Multiple Bank, Burst)  
1.8V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
VDD = 1.7V to 2V for Program, Erase and  
Read  
VDDQ = 1.7V to 2.24V for I/O Buffers  
VPP = 12V for fast Program (optional)  
SYNCHRONOUS / ASYNCHRONOUS READ  
Synchronous Burst Read mode: 66MHz  
Asynchronous/ Synchronous Page Read  
mode  
FBGA  
Random Access: 60ns, 70ns, 80ns  
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
8µs by Word typical for Fast Factory  
Program  
Double/Quadruple Word Program option  
Enhanced Factory Program options  
VFBGA56 (ZB)  
7.7 x 9mm  
MEMORY BLOCKS  
Multiple Bank Memory Array: 4 Mbit  
Banks  
Parameter Blocks (Top or Bottom  
location)  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M58WR128FT: 881Eh  
Bottom Device Code, M58WR128FB:  
881Fh  
DUAL OPERATIONS  
Program Erase in one Bank while Read in  
others  
No delay between Read and Write  
operations  
PACKAGE  
Compliant with Lead-Free Soldering  
Processes  
BLOCK LOCKING  
All blocks locked at Power up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
Lead-Free Versions  
SECURITY  
128 bit user programmable OTP cells  
64 bit unique device number  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
October 2004  
1/86  

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