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M58WT032KB70ZAQ6F PDF预览

M58WT032KB70ZAQ6F

更新时间: 2024-09-25 20:50:39
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路闪存
页数 文件大小 规格书
117页 2110K
描述
Flash, 2MX16, 70ns, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88

M58WT032KB70ZAQ6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88针数:88
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:70 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B88长度:10 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,63端子数量:88
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA88,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8,3 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.07 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:8 mmBase Number Matches:1

M58WT032KB70ZAQ6F 数据手册

 浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第2页浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第3页浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第4页浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第5页浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第6页浏览型号M58WT032KB70ZAQ6F的Datasheet PDF文件第7页 
M58WT032KT M58WT064KT  
M58WT032KB M58WT064KB  
32- and 64-Mbit (×16, multiple bank, burst)  
1.8 V core, 3.0 V I/O supply Flash memories  
Features  
Supply voltage  
– V = 1.7 V to 2 V for program, erase and  
DD  
read  
FBGA  
– V  
= 2.7 V to 3.3 V for I/O buffers  
DDQ  
– V = 9 V for fast program  
PP  
Synchronous/asynchronous read  
TFBGA88 (ZAQ)  
8 × 10 mm  
– Synchronous burst read mode: 52 MHz  
– Asynchronous/synchronous page read  
mode  
– Random access times: 70 ns  
Synchronous burst read suspend  
Programming time  
Security  
– 10 µs by word typical for fast factory  
program  
– 128-bit user programmable OTP cells  
– 64-bit unique device number  
– Double/quadruple word program option  
– Enhanced factory program options  
Common Flash interface (CFI)  
100 000 program/erase cycles per block  
Memory blocks  
Electronic signature  
– Multiple bank memory array: 4 Mbit banks  
– Parameter blocks (top or bottom location)  
– Manufacturer code: 20h  
– Device codes:  
M58WT032KT (top): 8866h  
M58WT032KB (bottom): 8867h  
– M58WT064KT (top): 8810h  
M58WT064KB (bottom): 8811h  
Dual operations  
– Program erase in one bank while read in  
others  
– No delay between read and write  
operations  
ECOPACK® package available  
Block locking  
– All blocks locked at power-up  
– Any combination of blocks can be locked  
– WP for block lock-down  
March 2008  
Rev 2  
1/117  
www.numonyx.com  
1

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