生命周期: | Transferred | 零件包装代码: | TSOP |
包装说明: | 14 X 20 MM, PLASTIC, TSOP-56 | 针数: | 56 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.4 |
Is Samacsys: | N | 最长访问时间: | 120 ns |
其他特性: | SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE | JESD-30 代码: | R-PDSO-G56 |
长度: | 18.4 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 56 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP1 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
并行/串行: | PARALLEL | 编程电压: | 3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 类型: | NOR TYPE |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M58LW064A120N6 | STMICROELECTRONICS |
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Flash, 4MX16, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW064A120N6T | STMICROELECTRONICS |
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Flash, 4MX16, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW064A120ZA1 | STMICROELECTRONICS |
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4MX16 FLASH 3V PROM, 120ns, PBGA64, 1 MM PITCH, TBGA-64 | |
M58LW064A120ZA1T | STMICROELECTRONICS |
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4MX16 FLASH 3V PROM, 120ns, PBGA64, 1 MM PITCH, TBGA-64 | |
M58LW064A120ZA6 | STMICROELECTRONICS |
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4MX16 FLASH 3V PROM, 120ns, PBGA64, 1 MM PITCH, TBGA-64 | |
M58LW064A150N1T | STMICROELECTRONICS |
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4MX16 FLASH 3V PROM, 150ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW064A150NF1T | STMICROELECTRONICS |
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64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150NF6 | STMICROELECTRONICS |
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暂无描述 | |
M58LW064A150NF6T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150NH1T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |