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M48T512V-70PM1 PDF预览

M48T512V-70PM1

更新时间: 2024-11-13 22:46:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 计时器或实时时钟微控制器和处理器外围集成电路静态存储器光电二极管双倍数据速率
页数 文件大小 规格书
14页 106K
描述
3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM

M48T512V-70PM1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:ROHS COMPLIANT, PLASTIC, DIP-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.83Is Samacsys:N
最大时钟频率:0.032 MHz外部数据总线宽度:8
信息访问方法:PARALLEL, DIRECT ADDRESS中断能力:N
JESD-30 代码:R-PDIP-P32长度:42.8 mm
端子数量:32最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:9.52 mm
子类别:Timer or RTC最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:PIN/PEG
端子节距:2.54 mm端子位置:DUAL
最短时间:SECONDS处于峰值回流温度下的最长时间:NOT SPECIFIED
易失性:NO宽度:15.24 mm
uPs/uCs/外围集成电路类型:TIMER, REAL TIME CLOCKBase Number Matches:1

M48T512V-70PM1 数据手册

 浏览型号M48T512V-70PM1的Datasheet PDF文件第2页浏览型号M48T512V-70PM1的Datasheet PDF文件第3页浏览型号M48T512V-70PM1的Datasheet PDF文件第4页浏览型号M48T512V-70PM1的Datasheet PDF文件第5页浏览型号M48T512V-70PM1的Datasheet PDF文件第6页浏览型号M48T512V-70PM1的Datasheet PDF文件第7页 
M48T512Y  
M48T512V  
®
3.3V-5V 4 Mbit (512Kb x8) TIMEKEEPER SRAM  
INTEGRATED ULTRA LOW POWER SRAM,  
REAL TIME CLOCK, POWER-FAIL CONTROL  
CIRCUIT, BATTERY, and CRYSTAL  
BCD CODED YEAR, MONTH, DAY, DATE,  
HOURS, MINUTES, and SECONDS  
AUTOMATIC POWER-FAIL CHIP DESELECT  
and WRITE PROTECTION  
32  
WRITE PROTECT VOLTAGES:  
1
(V  
PFD  
= Power-fail Deselect Voltage)  
– M48T512Y: 4.2V V  
– M48T512V: 2.7V V  
4.5V  
3.0V  
PFD  
PMDIP32 (PM)  
Module  
PFD  
CONVENTIONAL SRAM OPERATION;  
UNLIMITED WRITE CYCLES  
SOFTWARE CONTROLLED CLOCK  
CALIBRATION FOR HIGH ACCURACY  
APPLICATIONS  
Figure 1. Logic Diagram  
10 YEARS of DATA RETENTION and CLOCK  
OPERATION in the ABSENCE OF POWER  
PIN and FUNCTION COMPATIBLE with  
INDUSTRY STANDARD 512K X 8 SRAMS  
SELF-CONTAINED BATTERY and CRYSTAL  
V
CC  
in DIP PACKAGE  
DESCRIPTION  
19  
8
The M48T512Y/V TIMEKEEPER RAM is a 512Kb  
x 8 non-volatile static RAM and real time clock or-  
ganized as 524,288 words by 8 bits. The special  
DIP package provides a fully integrated battery  
back-up memory and real time clock solution.  
A0-A18  
DQ0-DQ7  
W
E
M48T512Y  
M48T512V  
Table 1. Signal Names  
G
A0-A18  
Address Inputs  
Data Inputs / Outputs  
Chip Enable Input  
Output Enable Input  
Write Enable Input  
Supply Voltage  
Ground  
DQ0-DQ7  
E
V
SS  
G
W
AI02262  
V
CC  
V
SS  
December 1999  
1/14  

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