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M40Z300WMQ6 PDF预览

M40Z300WMQ6

更新时间: 2024-09-15 12:57:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
25页 222K
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M40Z300WMQ6 数据手册

 浏览型号M40Z300WMQ6的Datasheet PDF文件第2页浏览型号M40Z300WMQ6的Datasheet PDF文件第3页浏览型号M40Z300WMQ6的Datasheet PDF文件第4页浏览型号M40Z300WMQ6的Datasheet PDF文件第5页浏览型号M40Z300WMQ6的Datasheet PDF文件第6页浏览型号M40Z300WMQ6的Datasheet PDF文件第7页 
M40Z300  
M40Z300W  
5V or 3V NVRAM supervisor for up to 8 LPSRAMs  
Features  
Converts low power SRAM into NVRAMs  
Precision power monitoring and power  
switching circuitry  
Automatic WRITE-protection when V is out-  
CC  
16  
of-tolerance  
1
Two-input decoder allows control for up to 8  
SRAMs (with 2 devices active in parallel)  
Choice of supply voltages and power-fail  
SO16 (MQ)  
deselect voltages:  
– M40Z300:  
V
= 4.5V to 5.5V  
CC  
THS = V : 4.5V V  
4.75V  
4.5V  
SS  
PFD  
THS = V  
: 4.2V V  
OUT  
PFD  
– M40Z300W:  
= 3.0V to 3.6V  
SNAPHAT (SH)  
crystal/battery  
V
CC  
THS = V : 2.8V V  
CC  
3.0V  
2.7V  
SS  
PFD  
V
= 2.7V to 3.3V  
THS = V  
: 2.5 V  
OUT  
PFD  
Reset output (RST) for power on reset  
Battery low pin (BL)  
Less than 12ns chip enable access  
propagation delay (for 5.0V device)  
Packaging includes a 28-lead SOIC and  
28  
®
SNAPHAT top (to be ordered separately), or  
1
A 16-lead SOIC  
SOIC package provides direct connection for a  
SOH28 (MH)  
SNAPHAT top which contains the battery  
RoHS compliant  
– Lead-free second level interconnect  
November 2007  
Rev 4  
1/25  
www.st.com  
1

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