Datasheet > M40ZVCCMH6E

M40ZVCCMH6E

更新时间： 2024-09-15 03:07:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器
页数	文件大小	规格书
21页	181K
描述
5V or 3V NVRAM supervisor for up to two LPSRAMs

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中文翻译

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数据手册

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M40ZVCCMH6E 数据手册

M40Z111

M40Z111W

5V or 3V NVRAM supervisor for up to two LPSRAMs

Features

■ Convert low power SRAMs into NVRAMs

■ Precision power monitoring and power

switching circuitry

SNAPHAT (SH)

battery

■ Automatic write-protection when V is out-of-

tolerance

■ Choice of supply voltages and

power-fail deselect voltages:

– M40Z111: V = 4.5 to 5.5V

THS = V ; 4.5 ≤ V

≤ 4.75V

PFD

THS = V

; 4.2 ≤ V

≤ 4.5V

PFD

OUT

– M40Z111W: V = 3.0 to 3.6V

THS = V ; 2.8 ≤ V

≤ 3.0V

PFD

= 2.7 to 3.3V

THS = V

; 2.5 ≤ V

≤ 2.7V

OUT

PFD

■ Less than 15ns chip enable access

propagation delay (for 5.0v device)

■ Packaging includes a 28-lead SOIC and

SOH28 (MH)

SNAPHAT top (to be ordered separately)

■ SOIC package provides direct connection for a

SNAPHAT top which contains the battery

■ RoHS compliant

– Lead-free second level interconnect

November 2007

Rev 4

1/21

www.st.com

12 3 4 5 6 7...21

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