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M30L40C-E3/4W PDF预览

M30L40C-E3/4W

更新时间: 2024-10-28 05:45:03
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网
页数 文件大小 规格书
4页 139K
描述
Dual Common-Cathode Schottky Rectifier

M30L40C-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.48 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:280 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

M30L40C-E3/4W 数据手册

 浏览型号M30L40C-E3/4W的Datasheet PDF文件第2页浏览型号M30L40C-E3/4W的Datasheet PDF文件第3页浏览型号M30L40C-E3/4W的Datasheet PDF文件第4页 
New Product  
M30L40C  
Vishay General Semiconductor  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
• Guardring for overvoltage protection  
TO-220AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
2
1
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
PIN 1  
PIN 3  
PIN 2  
CASE  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV  
)
2 x 15 A  
MECHANICAL DATA  
VRRM  
EAS  
40 V  
Case: TO-220AB  
20 mJ  
280 A  
Epoxy meets UL 94V-0 flammability rating  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF at IF = 15 A  
TJ max.  
0.413 V  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
M30L40C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
40  
V
total device  
Maximum average forward rectified current (Fig. 1)  
per diode  
30  
15  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
280  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Non-repetitive avalanche energy at 25 °C, IAS = 2 A, L = 10 mH per diode  
Voltage rate of change (rated VR)  
IRRM  
EAS  
1.0  
20  
A
mJ  
V/µs  
°C  
dV/dt  
10 000  
- 65 to + 150  
Operating junction and storage temperature range  
TJ, TSTG  
www.vishay.com  
430  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 89012  
Revision: 27-Aug-08  

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