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M29W800AT90ZA1T PDF预览

M29W800AT90ZA1T

更新时间: 2024-11-01 22:56:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
33页 235K
描述
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W800AT90ZA1T 数据手册

 浏览型号M29W800AT90ZA1T的Datasheet PDF文件第2页浏览型号M29W800AT90ZA1T的Datasheet PDF文件第3页浏览型号M29W800AT90ZA1T的Datasheet PDF文件第4页浏览型号M29W800AT90ZA1T的Datasheet PDF文件第5页浏览型号M29W800AT90ZA1T的Datasheet PDF文件第6页浏览型号M29W800AT90ZA1T的Datasheet PDF文件第7页 
M29W800AT  
M29W800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
2.7V to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 80ns  
44  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
FBGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
LFBGA48 (ZA)  
8 x 6 solder balls  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
V
CC  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
19  
15  
BLOCK  
A0-A18  
DQ0-DQ14  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
W
E
DQ15A–1  
BYTE  
RB  
ELECTRONIC SIGNATURE  
M29W800AT  
M29W800AB  
– Manufacturer Code: 20h  
G
– Top Device Code, M29W800AT: D7h  
– Bottom Device Code, M29W800AB: 5Bh  
RP  
V
SS  
AI02599  
March 2000  
1/33  

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