Datasheet > M29W800B100M5R

M29W800B100M5R

更新时间： 2024-02-13 22:51:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
33页	233K
描述
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

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数据手册

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M29W800B100M5R 数据手册

M29W800T

M29W800B

8 Mbit (1Mb x8 or 512Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W800T and M29W800B are replaced

respectively by the M29W800AT and

M29W800AB

2.7V to 3.6V SUPPLY VOLTAGEfor

PROGRAM, ERASE and READ OPERATIONS

FASTACCESS TIME: 90ns

FAST PROGRAMMING TIME

– 10µs by Byte / 20µs by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

TSOP48 (N)

12 x 20 mm

SO44 (M)

– Boot Block (Top or Bottom location)

– Parameterand Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

Figure 1. Logic Diagram

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

A0-A18

DQ0-DQ14

– ManufacturerCode: 0020h

– Device Code, M29W800T: 00D7h

– Device Code, M29W800B: 005Bh

DQ15A–1

BYTE

M29W800T

M29W800B

DESCRIPTION

The M29W800 is a non-volatile memory that may

be erased electrically at the block or chiplevel and

programmedin-systemona Byte-by-Byteor Word-

by-Wordbasisusing onlya single2.7V to3.6V V_CC

supply. For Program and Erase operations the

necessary high voltages are generated internally.

The device can also be programmed in standard

programmers.

AI02178

The array matrix organisationallows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protectedagainst pro-

graming and erase on programming equipment,

June 1999

1/33

This is informationon a product still in productionbut not recommended for new designs.

12 3 4 5 6 7...33

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与M29W800B100M5R相关器件

型号	品牌	获取价格	描述	数据表
M29W800B100M5TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W800B-100M5TR	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
M29W800B100M6R	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W800B100M6TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W800B-100M6TR	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
M29W800B-100N1	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO48, 12 X 20 MM, TSOP-48
M29W800B100N1R	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W800B-100N1R	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
M29W800B-100N1RTR	STMICROELECTRONICS	获取价格	1MX8 FLASH 3V PROM, 100ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48
M29W800B100N1TR	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

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