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M29W160DT PDF预览

M29W160DT

更新时间: 2024-11-07 22:56:03
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
29页 183K
描述
16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory

M29W160DT 数据手册

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M29W160DT  
M29W160DB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
44  
– 10µs per Byte/Word typical  
35 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Program and Erase algorithms  
ERASE SUSPEND and RESUME MODES  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
FBGA  
– Read and Program another Block during  
Erase Suspend  
LFBGA48 (ZA)  
8 x 6 solder balls  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
SECURITY MEMORY BLOCK  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29W160DT: 22C4h  
– Bottom Device Code M29W160DB: 2249h  
January 2001  
1/29  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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