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M29W160DT70ZA1 PDF预览

M29W160DT70ZA1

更新时间: 2024-11-20 10:56:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
29页 183K
描述
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160DT70ZA1 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:8 X 9 MM, 0.80 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.17Is Samacsys:N
最长访问时间:70 ns其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:9 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,31
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

M29W160DT70ZA1 数据手册

 浏览型号M29W160DT70ZA1的Datasheet PDF文件第2页浏览型号M29W160DT70ZA1的Datasheet PDF文件第3页浏览型号M29W160DT70ZA1的Datasheet PDF文件第4页浏览型号M29W160DT70ZA1的Datasheet PDF文件第5页浏览型号M29W160DT70ZA1的Datasheet PDF文件第6页浏览型号M29W160DT70ZA1的Datasheet PDF文件第7页 
M29W160DT  
M29W160DB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
44  
– 10µs per Byte/Word typical  
35 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Program and Erase algorithms  
ERASE SUSPEND and RESUME MODES  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
FBGA  
– Read and Program another Block during  
Erase Suspend  
LFBGA48 (ZA)  
8 x 6 solder balls  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
SECURITY MEMORY BLOCK  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29W160DT: 22C4h  
– Bottom Device Code M29W160DB: 2249h  
January 2001  
1/29  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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