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M29W160BB90M6T PDF预览

M29W160BB90M6T

更新时间: 2024-09-19 22:55:59
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
25页 171K
描述
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W160BB90M6T 数据手册

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M29W160BT  
M29W160BB  
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
PRELIMINARY DATA  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
44  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
1
35 MEMORY BLOCKS  
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 32 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
FBGA  
LFBGA48 (ZA)  
8 x 6 solder balls  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
V
CC  
MODE  
SECURITY MEMORY BLOCK  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
20  
15  
A0-A19  
DQ0-DQ14  
100,000 PROGRAM/ERASE CYCLES per  
W
E
DQ15A–1  
BYTE  
RB  
BLOCK  
M29W160BT  
M29W160BB  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
G
ELECTRONIC SIGNATURE  
RP  
– Manufacturer Code: 0020h  
– Top Device Code M29W160BT: 22C4h  
– Bottom Device Code M29W160BB: 2249h  
V
SS  
AI00981  
Note: RB not available on SO44 package.  
February 2000  
1/25  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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