Datasheet > M29W128GL90ZA6E

M29W128GL90ZA6E

更新时间： 2024-09-21 04:33:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器
页数	文件大小	规格书
91页	799K
描述
8MX16 FLASH 3V PROM, 90ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64

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M29W128GL90ZA6E 数据手册

M29W128GH

M29W128GL

128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block)

3 V supply Flash memory

Preliminary Data

Features

■ Supply voltage

– V = 2.7 to 3.6 V for Program, Erase and

Read

– V

= 1.65 to 3.6 V for I/O buffers

CCQ

PPH

TSOP56 (N)

14 x 20 mm

= 12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page size: 8 words

BGA

– Page access: 25, 30 ns

– Random access: 70, 90 ns

TBGA64 (ZA)

10 x 13 mm

■ Fast Program commands

– 32-word (64-byte write buffer)

– Faster Production/Batch Programming

– Faster Block and Chip Erase

■ Enhanced Buffered Program commands

– 256-word

■ V /WP pin for Fast Program and Write:

■ Programming time

protects first or last block regardless of block

protection settings

– 16 µs per byte/word typical

– Chip program time:

■ Software protection:

– Volatile protection

5 s with V

PPH

8 s without V

PPH

– Non-volatile protection

– Password protection

■ Memory organization

– M29128GH/L: 128 main blocks,

128 Kbytes/64 Kwords each

■ Common Flash interface

– 64 bit security code

■ Program/Erase controller

– Embedded byte/word program algorithms

■ 128 word extended memory block

– Extra block used as security block or to

store additional information

■ Program/ Erase Suspend and Resume

– Read from any block during Program

Suspend

■ Low power consumption

– Read and Program another block during

Erase Suspend

– Standby and automatic standby

■ Minimum 100,000 Program/Erase cycles per

■ Unlock Bypass/Block Erase/Chip Erase/Write

to Buffer/Enhanced Buffered Program

commands

block

■ ECOPACK packages

Table 1.

Device summary

Root Part Number

Device code

M29W128GH: uniform, last block protected by V_PP/WP

M29W128GL: uniform, first block protected by V_PP/WP

227Eh + 2221h + 2201h

227Eh + 2221h + 2200h

October 2007

Rev 2

1/91

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...91

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与M29W128GL90ZA6E相关器件

型号	品牌	获取价格	描述	数据表
M29W128GL90ZA6F	STMICROELECTRONICS	获取价格	8MX16 FLASH 3V PROM, 90ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
M29W128GSH70N6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSH70ZA6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSH70ZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSH70ZS6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSL70N6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSL70ZA6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSL70ZA6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSL70ZS6E	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory
M29W128GSL70ZS6F	MICRON	获取价格	128Mb (16Mb x8 or 8Mb x16), 3V, Page, Uniform Block, Parallel NOR Flash Memory

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