Datasheet > M29W040B70NZ1F

M29W040B70NZ1F

更新时间： 2024-11-04 02:52:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
20页	436K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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M29W040B70NZ1F 数据手册

M29W040B

4 Mbit (512Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 10µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

PLCC32 (K)

TSOP32 (N)

8 x 20mm

– Read and Program another Block during

Erase Suspend

TSOP32 (NZ)

8 x 14mm

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

Figure 1. Logic Diagram

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E3h

A0-A18

DQ0-DQ7

■ ECOPACK^®PACKAGES AVAILABLE

M29W040B

AI02953

September 2005

1/20

12 3 4 5 6 7...20

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