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M29W040B90K6T PDF预览

M29W040B90K6T

更新时间: 2024-09-19 22:07:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 180K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040B90K6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:PLASTIC, LCC-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88最长访问时间:90 ns
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:11.43 mmBase Number Matches:1

M29W040B90K6T 数据手册

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M29W040B  
4 Mbit (512Kb x8, Uniform Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– Read and Program another Block during  
Erase Suspend  
TSOP32 (NZ)  
8 x 14mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E3h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29W040B  
G
V
SS  
AI02953  
April 2002  
1/20  

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