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M29W040B90N1T PDF预览

M29W040B90N1T

更新时间: 2024-11-07 22:07:03
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 180K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040B90N1T 数据手册

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M29W040B  
4 Mbit (512Kb x8, Uniform Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– Read and Program another Block during  
Erase Suspend  
TSOP32 (NZ)  
8 x 14mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E3h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29W040B  
G
V
SS  
AI02953  
April 2002  
1/20  

M29W040B90N1T 替代型号

型号 品牌 替代类型 描述 数据表
AT49BV040A-90TU ATMEL

功能相似

Flash, 512KX8, 90ns, PDSO32, 8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
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