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M29W040B70N1 PDF预览

M29W040B70N1

更新时间: 2024-11-08 05:01:07
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 436K
描述
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

M29W040B70N1 数据手册

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M29W040B  
4 Mbit (512Kb x8, Uniform Block)  
Low Voltage Single Supply Flash Memory  
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 55ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
– Read and Program another Block during  
Erase Suspend  
TSOP32 (NZ)  
8 x 14mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
Figure 1. Logic Diagram  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
V
CC  
19  
8
– Device Code: E3h  
A0-A18  
DQ0-DQ7  
ECOPACK® PACKAGES AVAILABLE  
W
E
M29W040B  
G
V
SS  
AI02953  
September 2005  
1/20  

M29W040B70N1 替代型号

型号 品牌 替代类型 描述 数据表
M29W040B70N6E STMICROELECTRONICS

完全替代

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70N1T STMICROELECTRONICS

完全替代

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B70N6T STMICROELECTRONICS

功能相似

4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

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