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M29F800DT90M6E PDF预览

M29F800DT90M6E

更新时间: 2024-11-23 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路光电二极管
页数 文件大小 规格书
39页 254K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

M29F800DT90M6E 数据手册

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M29F800DT  
M29F800DB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
5V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 5V ±10% for Program, Erase and Read  
CC  
ACCESS TIME: 55, 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
19 MEMORY BLOCKS  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 16 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithms  
ERASE SUSPEND and RESUME MODES  
SO44 (M)  
– Read and Program another Block during  
Erase Suspend  
TSOP48 (N)  
12 x 20mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29F800DT: 22ECh  
– Bottom Device Code M29F800DB: 2258h  
February 2003  
1/39  

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