Datasheet > M29F800FB55N6F2

M29F800FB55N6F2

更新时间： 2024-11-25 09:44:51

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
65页	1669K
描述
Flash, 512KX16, 55ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48

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M29F800FB55N6F2 数据手册

M29F 200FT, 400FT, 800FT, 160FT

M29F 200FB, 400FB, 800FB, 160FB

Top / Bottom Boot Block

5 V Supply Flash Memory

Features

Supply voltage

– V_CC= 5 V

Access time: 55 ns

Program / Erase controller

– Embedded byte/word program algorithms

TSOP48 (N)

12 x 20 mm

Erase Suspend and Resume modes

Low power consumption

– Standby and Automatic Standby

100,000 Program/Erase cycles per block

Electronic signature

– Manufacturer code: 0x01

– Top Device codes:

–

M29F200FT: 0x2251

M29F400FT: 0x2223

M29F800FT: 0x22D6

M29F160FT: 0x22D2

SO44 (M)

– Bottom Device codes:

Automotive device grade 3:

–

M29F200FB: 0x2257

M29F400FB: 0x22AB

M29F800FB: 0x2258

M29F160FB: 0x22D8

– Temperature: –40 to 125 °C

Automotive device grade 6:

– Temperature: –40 to 85 °C

Automotive grade certified (AEC-Q100)

RoHS packages available

– SO44

– TSOP48

April 2009

Rev 3

1/65

www.numonyx.com

12 3 4 5 6 7...65

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