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M29F800FB55N3F2 PDF预览

M29F800FB55N3F2

更新时间: 2024-11-25 15:17:43
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
56页 679K
描述
Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory

M29F800FB55N3F2 数据手册

 浏览型号M29F800FB55N3F2的Datasheet PDF文件第2页浏览型号M29F800FB55N3F2的Datasheet PDF文件第3页浏览型号M29F800FB55N3F2的Datasheet PDF文件第4页浏览型号M29F800FB55N3F2的Datasheet PDF文件第5页浏览型号M29F800FB55N3F2的Datasheet PDF文件第6页浏览型号M29F800FB55N3F2的Datasheet PDF文件第7页 
M29FxxxFT/B  
Features  
Micron Parallel NOR Flash Embedded  
Memory  
Top/Bottom Boot Block 5V Supply  
M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B  
• RoHS-compliant packages  
– TSOP48  
– SO44 (16Mb not available for this package)  
• Automotive device grade 3  
Temperature: –40 to +125°C  
Features  
• Supply voltage  
– VCC = 5V  
• Access time: 55ns  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Erase suspend and resume modes  
• Low power consumption  
– Standby and automatic standby  
• 100,000 PROGRAM/ERASE cycles per block  
• Electronic signature  
• Automotive device grade 6  
Temperature: –40 to +85°C  
• Automotive grade certified (AEC-Q100)  
– Manufacturer code: 0x01h  
Top device codes  
– M29F200FT: 0x2251  
– M29F400FT: 0x2223  
– M29F800FT: 0x22D6  
– M29F160FT: 0x22D2  
• Bottom device codes  
– M29F200FB: 0x2257  
– M29F400FB: 0x22AB  
– M29F800FB: 0x2258  
– M29F160FB: 0x22D8  
CCMTD-1725822587-8401  
m29fxxxf/t_2mb-16mb.pdf - Rev. C 5/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2013 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

M29F800FB55N3F2 替代型号

型号 品牌 替代类型 描述 数据表
M29F800FT55N3E2 MICRON

完全替代

Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory
M29F800FB5AN6F2 MICRON

类似代替

Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory
M29F800FT5AN6E2 MICRON

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Top/Bottom Boot Block, 5V, Parallel NOR Flash Memory

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