5秒后页面跳转
M29DW641F70ZE6 PDF预览

M29DW641F70ZE6

更新时间: 2024-11-29 20:19:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
80页 632K
描述
4MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48

M29DW641F70ZE6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,32
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.61Is Samacsys:N
最长访问时间:70 ns其他特性:100,000 PROGRAM/ERASE CYCLES
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:16,126
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
页面大小:8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:4K,32K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29DW641F70ZE6 数据手册

 浏览型号M29DW641F70ZE6的Datasheet PDF文件第2页浏览型号M29DW641F70ZE6的Datasheet PDF文件第3页浏览型号M29DW641F70ZE6的Datasheet PDF文件第4页浏览型号M29DW641F70ZE6的Datasheet PDF文件第5页浏览型号M29DW641F70ZE6的Datasheet PDF文件第6页浏览型号M29DW641F70ZE6的Datasheet PDF文件第7页 
M29DW641F  
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)  
3V Supply Flash Memory  
Features  
Supply voltage  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V /WP=12V for Fast Program (optional)  
PP  
Asynchronous Page Read mode  
– Page Width 8 Words  
TSOP48 (N)  
12 x 20mm  
– Page Access 25, 30ns  
– Random Access: 60, 70ns  
Programming Time  
FBGA  
– 10µs per Word typical  
– 4 Words at-a-time Program  
Memory blocks  
TFBGA48 (ZE)  
6 x 8mm  
– Quadruple Bank Memory Array:  
8Mbit+24Mbit+24Mbit+8Mbit  
– Parameter Blocks (at Top and Bottom)  
Dual Operations  
Hardware Block Protection  
– While Program or Erase in a group of  
banks (from 1 to 3), Read in any of the  
other banks  
– V /WP Pin for fast program and write  
PP  
protect of the four outermost parameter  
blocks  
Program/Erase Suspend and Resume modes  
Software Block Protection  
– Standard Protection  
– Password Protection  
– Read from any Block during Program  
Suspend  
– Read and Program another Block during  
Erase Suspend  
Electronic Signature  
– Manufacturer code: 0020h  
– Device code: 227Eh + 2203h + 2200h  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
®
ECOPACK packages  
Common Flash Interface  
– 64 bit Security Code  
100,000 Program/Erase cycles per block  
Low power consumption  
– Standby and Automatic Standby  
Extended Memory Block  
– Extra block used as security block or to  
store additional information  
November 2006  
Rev 4  
1/80  
www.st.com  
1

与M29DW641F70ZE6相关器件

型号 品牌 获取价格 描述 数据表
M29DW641F70ZE6E STMICROELECTRONICS

获取价格

4MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
M29DW641F70ZE6E NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F70ZE6F NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F70ZE6F STMICROELECTRONICS

获取价格

4MX16 FLASH 3V PROM, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48
M29DW641F70ZE6T NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90N1 NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90N1E NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90N1F NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90N1T NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90N6 NUMONYX

获取价格

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory