M29F002B-120K6TR

更新时间： 2024-11-28 22:51:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
29页	199K
描述
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory

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数据手册

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M29F002B-120K6TR 数据手册

M29F002T, M29F002NT

M29F002B

2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory

5V ± 10% SUPPLYVOLTAGEfor PROGRAM,

ERASE and READ OPERATIONS

FASTACCESS TIME: 70ns

FAST PROGRAMMING TIME: 10µs typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

– Status Register bits

MEMORY BLOCKS

PLCC32 (K)

PDIP32 (P)

– Boot Block (Top or Bottom location)

– Parameterand Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

TSOP32 (N)

8 x 20mm

LOW POWER CONSUMPTION

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

Figure 1. Logic Diagram

– Device Code, M29F002T: B0h

– Device Code, M29F002NT: B0h

– Device Code, M29F002B: 34h

A0-A17

DQ0-DQ7

DESCRIPTION

The M29F002 is a non-volatile memory that may

be erased electrically at the block or chiplevel and

programmed in-system on a Byte-by-Byte basis

usingonlyasingle5VV_CCsupply.ForProgramand

Erase operations the necessary high voltages are

generated internally. The device can also be pro-

grammed in standardprogrammers.

M29F002T

M29F002B

M29F002NT

(*) RPNC

The array matrix organisationallows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protectedagainst pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application. Each block can be programmed

and erased over 100,000 cycles.

AI02078C

Note: * RPNC function is not available for the M29F002NT

July 1998

1/29

12 3 4 5 6 7...29

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