Datasheet > M29DW641F90ZE6E

M29DW641F90ZE6E

更新时间： 2024-11-29 05:01:03

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
80页	1631K
描述
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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M29DW641F90ZE6E 数据手册

M29DW641F

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)

3V Supply Flash Memory

Features

■ Supply voltage

– V_CC= 2.7V to 3.6V for Program, Erase and

Read

– V_PP/WP=12V for Fast Program (optional)

■ Asynchronous Page Read mode

– Page Width 8 Words

TSOP48 (N)

12 x 20mm

– Page Access 25, 30ns

– Random Access: 60, 70ns

■ Programming Time

FBGA

– 10µs per Word typical

– 4 Words at-a-time Program

■ Memory blocks

TFBGA48 (ZE)

6 x 8mm

– Quadruple Bank Memory Array:

8Mbit+24Mbit+24Mbit+8Mbit

– Parameter Blocks (at Top and Bottom)

■ Dual Operations

■ Hardware Block Protection

– While Program or Erase in a group of

banks (from 1 to 3), Read in any of the

other banks

– V_PP/WP Pin for fast program and write

protect of the four outermost parameter

blocks

■ Program/Erase Suspend and Resume modes

■ Software Block Protection

– Standard Protection

– Password Protection

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ Electronic Signature

– Manufacturer code: 0020h

– Device code: 227Eh + 2203h + 2200h

■ ECOPACK^®packages

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Common Flash Interface

– 64 bit Security Code

■ 100,000 Program/Erase cycles per block

■ Low power consumption

– Standby and Automatic Standby

■ Extended Memory Block

– Extra block used as security block or to

store additional information

December 2007

Rev 5

1/80

www.numonyx.com

12 3 4 5 6 7...80

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