Datasheet > M29DW641F90N6E

M29DW641F90N6E

更新时间： 2024-11-29 02:54:23

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
80页	1631K
描述
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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M29DW641F90N6E 数据手册

M29DW641F

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)

3V Supply Flash Memory

Features

■ Supply voltage

– V_CC= 2.7V to 3.6V for Program, Erase and

Read

– V_PP/WP=12V for Fast Program (optional)

■ Asynchronous Page Read mode

– Page Width 8 Words

TSOP48 (N)

12 x 20mm

– Page Access 25, 30ns

– Random Access: 60, 70ns

■ Programming Time

FBGA

– 10µs per Word typical

– 4 Words at-a-time Program

■ Memory blocks

TFBGA48 (ZE)

6 x 8mm

– Quadruple Bank Memory Array:

8Mbit+24Mbit+24Mbit+8Mbit

– Parameter Blocks (at Top and Bottom)

■ Dual Operations

■ Hardware Block Protection

– While Program or Erase in a group of

banks (from 1 to 3), Read in any of the

other banks

– V_PP/WP Pin for fast program and write

protect of the four outermost parameter

blocks

■ Program/Erase Suspend and Resume modes

■ Software Block Protection

– Standard Protection

– Password Protection

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ Electronic Signature

– Manufacturer code: 0020h

– Device code: 227Eh + 2203h + 2200h

■ ECOPACK^®packages

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Common Flash Interface

– 64 bit Security Code

■ 100,000 Program/Erase cycles per block

■ Low power consumption

– Standby and Automatic Standby

■ Extended Memory Block

– Extra block used as security block or to

store additional information

December 2007

Rev 5

1/80

www.numonyx.com

12 3 4 5 6 7...80

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M29DW641F90ZE6	NUMONYX	获取价格	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90ZE6E	NUMONYX	获取价格	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW641F90ZE6F	NUMONYX	获取价格	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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