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M28V841-120N1RTR PDF预览

M28V841-120N1RTR

更新时间: 2024-11-11 14:35:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
26页 509K
描述
1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, REVERSE, TSOP-40

M28V841-120N1RTR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1-R,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
Is Samacsys:N最长访问时间:120 ns
JESD-30 代码:R-PDSO-G40长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:10 mm
Base Number Matches:1

M28V841-120N1RTR 数据手册

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与M28V841-120N1RTR相关器件

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M28V841-120N1TR STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V841-120N3R STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
M28V841-120N3RTR STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
M28V841-120N3TR STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V841-120N6 STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V841-120N6RTR STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
M28V841-120N6TR STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
M28V841-150M1 STMICROELECTRONICS

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1MX8 FLASH 12V PROM, 150ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
M28V841-150M1TR STMICROELECTRONICS

获取价格

1MX8 FLASH 12V PROM, 150ns, PDSO44, 0.525 INCH, PLASTIC, SO-44