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M28W160B PDF预览

M28W160B

更新时间: 2024-11-11 04:19:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
45页 334K
描述
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160B 数据手册

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M28W160BT  
M28W160BB  
16 Mbit (1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.6V for Input/Output  
DDQ  
µBGA  
– V = 12V for fast Program (optional)  
PP  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME  
– 10µs typical  
µBGA46 (GB)  
6.39 x 6.37mm  
– Double Word Programming Option  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
FBGA  
MEMORY BLOCKS  
TFBGA46 (ZB)  
6.39 x 6.37mm  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
BLOCK PROTECTION on TWO PARAMETER  
BLOCKS  
– WP for Block Protection  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
TSOP48 (N)  
12 x 20mm  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W160BT: 90h  
– Bottom Device Code, M28W160BB: 91h  
May 2002  
1/45  

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