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M28V841-120N6TR PDF预览

M28V841-120N6TR

更新时间: 2024-11-11 18:55:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 902K
描述
1MX8 FLASH 12V PROM, 120ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M28V841-120N6TR 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1,针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最长访问时间:120 nsJESD-30 代码:R-PDSO-G40
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:40
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:12 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:10 mmBase Number Matches:1

M28V841-120N6TR 数据手册

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