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M28F512-90XB6TR PDF预览

M28F512-90XB6TR

更新时间: 2024-11-10 14:52:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 148K
描述
64KX8 FLASH 12V PROM, 90ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

M28F512-90XB6TR 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:0.600 INCH, PLASTIC, DIP-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.62
Is Samacsys:N最长访问时间:90 ns
JESD-30 代码:R-PDIP-T32长度:41.91 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL编程电压:12 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

M28F512-90XB6TR 数据手册

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M28F512  
512 Kbit (64Kb x8, Bulk) Flash Memory  
5V ±10% SUPPLYVOLTAGE  
12V PROGRAMMING VOLTAGE  
FASTACCESS TIME: 90ns  
BYTE PROGRAMING TIME: 10µs typical  
ELECTRICAL CHIP ERASE in 1s RANGE  
LOW POWER CONSUMPTION  
32  
– Stand-byCurrent: 5µA typical  
10,000 ERASE/PROGRAM CYCLES  
1
INTEGRATED ERASE/PROGRAM-STOP  
TIMER  
PLCC32 (C)  
PDIP32 (B)  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 20h  
– Device Code: 02h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M28F512 Flash memory is a non-volatile  
memory that may be erased electricallyat the chip  
level and programmed by byte. It is organised as  
64 Kbytes of 8 bits. It uses a command register  
architecturetoselecttheoperatingmodesandthus  
provides a simple microprocessor interface. The  
device is offered in PDIP32 and PLCC32 pack-  
ages.  
V
V
PP  
CC  
16  
8
A0-A15  
DQ0-DQ7  
W
E
M28F512  
Table 1. Signal Names  
A0-A15  
Address Inputs  
Data Inputs / Outputs  
Chip Enable  
G
DQ0-DQ7  
E
G
Output Enable  
Write Enable  
V
SS  
AI00548B  
W
VPP  
VCC  
VSS  
Program Supply  
Supply Voltage  
Ground  
August 1998  
1/20  

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