Datasheet > M28F512-90XC6TR

M28F512-90XC6TR

更新时间： 2024-11-11 03:35:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器
页数	文件大小	规格书
20页	148K
描述
64KX8 FLASH 12V PROM, 90ns, PQCC32, PLASTIC, LCC-32

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中文翻译

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M28F512-90XC6TR 数据手册

M28F512

512 Kbit (64Kb x8, Bulk) Flash Memory

5V ±10% SUPPLYVOLTAGE

12V PROGRAMMING VOLTAGE

FASTACCESS TIME: 90ns

BYTE PROGRAMING TIME: 10µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Stand-byCurrent: 5µA typical

10,000 ERASE/PROGRAM CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

PLCC32 (C)

PDIP32 (B)

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

– Device Code: 02h

Figure 1. Logic Diagram

DESCRIPTION

The M28F512 Flash memory is a non-volatile

memory that may be erased electricallyat the chip

level and programmed by byte. It is organised as

64 Kbytes of 8 bits. It uses a command register

architecturetoselecttheoperatingmodesandthus

provides a simple microprocessor interface. The

device is offered in PDIP32 and PLCC32 pack-

ages.

A0-A15

DQ0-DQ7

M28F512

Table 1. Signal Names

A0-A15

Address Inputs

Data Inputs / Outputs

Chip Enable

DQ0-DQ7

Output Enable

Write Enable

AI00548B

V_PP

V_CC

V_SS

Program Supply

Supply Voltage

Ground

August 1998

1/20

12 3 4 5 6 7...20

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