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M28F841-100N1R PDF预览

M28F841-100N1R

更新时间: 2024-11-08 20:39:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 916K
描述
1MX8 FLASH 12V PROM, 100ns, PDSO40, 10 X 20 MM, PLASTIC, REVERSE, TSOP-40

M28F841-100N1R 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:10 X 20 MM, PLASTIC, REVERSE, TSOP-40针数:40
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最长访问时间:100 ns其他特性:100000 PROGRAM/ERASE CYCLES; SECTOR ERASE
JESD-30 代码:R-PDSO-G40长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:12 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M28F841-100N1R 数据手册

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