生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | 10 X 20 MM, PLASTIC, TSOP-40 | 针数: | 40 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.8 |
Is Samacsys: | N | 最长访问时间: | 70 ns |
其他特性: | 100000 PROGRAM/ERASE CYCLES | 启动块: | BOTTOM |
JESD-30 代码: | R-PDSO-G40 | 长度: | 18.4 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 40 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -20 °C |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
编程电压: | 12 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 5.25 V |
最小供电电压 (Vsup): | 4.75 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M28F421-80N3TR | STMICROELECTRONICS |
获取价格 |
512KX8 FLASH 12V PROM, 80ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 | |
M28F421-90N3 | STMICROELECTRONICS |
获取价格 |
512KX8 FLASH 12V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 | |
M28F421-90N5TR | STMICROELECTRONICS |
获取价格 |
512KX8 FLASH 12V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 | |
M28F421-90XN3TR | STMICROELECTRONICS |
获取价格 |
512KX8 FLASH 12V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40 | |
M28F512 | STMICROELECTRONICS |
获取价格 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | |
M28F512-10B1 | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 12V PROM, 10ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
M28F512-10B3 | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 12V PROM, 10ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
M28F512-10B3TR | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 12V PROM, 10ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
M28F512-10C1 | STMICROELECTRONICS |
获取价格 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory | |
M28F512-10C1TR | STMICROELECTRONICS |
获取价格 |
64KX8 FLASH 12V PROM, 10ns, PQCC32, PLASTIC, LCC-32 |