Datasheet > 存储 > OTP ROM> M27W101-100N6TR

M27W101-100N6TR

更新时间： 2024-10-28 22:23:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W101-100N6TR 数据手册

M27W101

1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 70ns at V = 3.0V to 3.6V

– 80ns at V = 2.7V to 3.6V

■ PIN COMPATIBLE with M27C1001

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 15µA

FDIP32W (F)

PDIP32 (B)

■ PROGRAMMING TIME 100µs/byte

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

– Device Code: 05h

Figure 1. Logic Diagram

DESCRIPTION

The M27W101 is a low voltage 1 Mbit EPROM of-

fered in two range UV (ultra violet erase) and OTP

(one timeprogrammable). It is ideally suited for mi-

croprocessor systems requiring large data or pro-

gram storage and is organized as 131,072 by 8

bits.

The M27W101 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85 °C tem-

perature range.

A0-A16

Q0-Q7

The decrease in operating power allows either a

reduction of the size of the battery or an increase

in the time between battery recharges.

M27W101

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27W101 is offered in PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

AI01587

April 2000

1/15

12 3 4 5 6 7...15

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