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M27V101-200F1 PDF预览

M27V101-200F1

更新时间: 2024-10-28 05:44:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器
页数 文件大小 规格书
15页 105K
描述
128KX8 UVPROM, 200ns, CDIP32, WINDOWED, FRIT SEALED, CERAMIC, DIP-32

M27V101-200F1 数据手册

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M27V101  
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM  
NOT FOR NEW DESIGN  
M27V101 is replaced by the M27W101  
3V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME: 90ns  
32  
32  
LOW POWER CONSUMPTION:  
– Active Current 15mA at 5MHz  
– Standby Current 20µA  
1
1
FDIP32W (F)  
PDIP32 (B)  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 05h  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
DESCRIPTION  
The M27V101 is a low voltage 1 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organized as 131,072 by 8  
bits.  
Figure 1. Logic Diagram  
The M27V101 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
V
PP  
CC  
The FDIP32W (window ceramic frit-seal package)  
has a transparent lid which allow the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
17  
8
A0-A16  
Q0-Q7  
P
E
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V101 is offered in both PDIP32, PLCC32 and  
TSOP32 (8 x 20 mm) packages.  
M27V101  
G
V
SS  
AI00660B  
July 2000  
1/15  
This is information on a product still in production but not recommended for new designs.  

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