Datasheet > M27V101-120N6

M27V101-120N6

更新时间： 2024-10-28 04:43:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器光电二极管
页数	文件大小	规格书
15页	105K
描述
128KX8 OTPROM, 120ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32

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数据手册

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M27V101-120N6 数据手册

M27V101

1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM

NOT FOR NEW DESIGN

■ M27V101 is replaced by the M27W101

■ 3V to 3.6V LOW VOLTAGE in READ

OPERATION

■ ACCESS TIME: 90ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

FDIP32W (F)

PDIP32 (B)

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 05h

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

DESCRIPTION

The M27V101 is a low voltage 1 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organized as 131,072 by 8

bits.

Figure 1. Logic Diagram

The M27V101 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allow the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

A0-A16

Q0-Q7

For applications where the content is programmed

only one time and erasure is not required, the

M27V101 is offered in both PDIP32, PLCC32 and

TSOP32 (8 x 20 mm) packages.

M27V101

AI00660B

July 2000

1/15

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...15

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M27V101-150K1TR	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM