Datasheet > M24C04-DRE

M24C04-DRE

更新时间： 2024-09-14 01:00:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
41页	1199K
描述
4-Kbit serial IC bus EEPROM - 105C operation

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数据手册

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M24C04-DRE 数据手册

M24C04-DRE

4-Kbit serial I²C bus EEPROM - 105°C operation

Datasheet - production data

Features

• Compatible with all I C bus modes

– 1 MHz

– 400 kHz

– 100 kHz

• Memory array

– 4 Kbits (512 bytes) of EEPROM

TSSOP8 (DW)

169 mil width

– Page size: 16 bytes

– Additional Write lockable page

(Identification page)

• Extended temperature and voltage range

– -40 °C to 105 °C; 1.8 V to 5.5 V

• Schmitt trigger inputs for noise filtering

• Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

SO8 (MN)

150 mil width

• Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 900 k Write cycles at 105 °C

WFDFPN8 (MF)

2 x 3 mm

• Data retention

– more than 50 years at 105 °C

– 200 years at 55 °C

• ESD Protection (Human Body Model)

– 4000 V

• Packages

– RoHS compliant and halogen-free

(ECOPACK2 )

January 2015

DocID027421 Rev 1

1/41

This is information on a product in full production.

www.st.com

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