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M24164-BN6 PDF预览

M24164-BN6

更新时间: 2024-11-07 04:36:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
16页 117K
描述
16KX1 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.25 MM LEAD FRAME, SKINNY, PLASTIC, DIP-8

M24164-BN6 数据手册

 浏览型号M24164-BN6的Datasheet PDF文件第2页浏览型号M24164-BN6的Datasheet PDF文件第3页浏览型号M24164-BN6的Datasheet PDF文件第4页浏览型号M24164-BN6的Datasheet PDF文件第5页浏览型号M24164-BN6的Datasheet PDF文件第6页浏览型号M24164-BN6的Datasheet PDF文件第7页 
M24164  
16 Kbit Serial I2C BUS EEPROM  
PRELIMINARY DATA  
TWO WIRE I2C SERIAL INTERFACE  
SUPPORTS 400kHz PROTOCOL  
1 MILLION ERASE/WRITE CYCLES  
40 YEARS DATA RETENTION  
2ms TYPICAL PROGRAMMING TIME  
SINGLE SUPPLY VOLTAGE:  
8
8
– 4.5V to 5.5V for M24164  
– 2.5V to 5.5V for M24164-W  
1
1
PSDIP8 (BN)  
0.25mm Frame  
SO8 (MN)  
150mil Width  
– 1.8V to 5.5V for M24164-R  
HARDWARE WRITE CONTROL  
BYTE and PAGE WRITE (up to 16 BYTES)  
BYTE, RANDOM and SEQUENTIAL READ  
MODES  
SELF TIMED PROGRAMMING CYCLE  
AUTOMATIC ADDRESS INCREMENTING  
Figure 1. Logic Diagram  
ENHANCED ESD/LATCH-UP  
PERFORMANCES  
DESCRIPTION  
The M24164 is a 16 Kbit EEPROM. The memory  
is an electrically erasable programmable memory  
(EEPROM) fabricated with STMicroelectronics’s  
High Endurance Single Polysilicon CMOS technol-  
ogy which guarantees an endurance typically well  
above one million erase/write cycles with a data  
retention of 40 years. The "-W" version operate with  
a power supply value as low as 2.5V and the "-R"  
version operate down to 1.8V.  
V
CC  
3
E0-E2  
SDA  
Both Plastic Dual-in-Line and Plastic Small Outline  
packages are available.  
M24164  
SCL  
WC  
Table 1. Signal Names  
E0-E2  
SDA  
SCL  
WC  
Chip Enable Inputs  
Serial Data Address Input/Output  
Serial Clock  
V
SS  
AI02264  
Write Control  
VCC  
Supply Voltage  
VSS  
Ground  
January 1999  
1/16  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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