LS4391
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix 2N4391
FEATURES
The LS4391 features many of the superior
DIRECT REPLACEMENT FOR SILICONIX 2N4391
LOW ON RESISTANCE
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
rDS(on) ≤ 30Ω
ID(off) = 5pA
t(ON) ≤= 15ns
LOW GATE OPERATING CURRENT
FAST SWITCHING
LS4391 Benefits:
ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)
Low Error Voltage
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage / Gate to Source Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
‐65°C to +200°C
‐55°C to +200°C
350mW
LS4391 Applications:
Analog Switches
Choppers, Sample-and-Hold
Normally “On” Switches, Current Limiters
IG = 50mA
‐35V
LS4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
VDS(on)
VDS(on)
VDS(on)
IDSS
IGSS
IG
ID(off)
rDS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source On Voltage
Drain to Source On Voltage
Drain to Source On Voltage
Drain to Source Saturation Current2
Gate Reverse Current
MIN
‐35
‐4
‐‐
‐‐
‐‐
‐‐
50
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
0.25
0.3
0.35
‐‐
‐5
‐5
5
‐‐
MAX
‐‐
‐10
1
‐‐
‐‐
0.4
‐‐
‐100
‐‐
100
30
UNITS
V
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 15V, ID = 10nA
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
VDS = 20V, VGS = 0V
VGS = ‐20V, VDS = 0V
VDG = 15V, ID = 10mA
VDS = 10V, VGS = ‐10V
VGS = 0V, ID = 1mA
mA
pA
Ω
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
‐‐
LS4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
UNITS
mS
CONDITIONS
gfs
Forward Transconductance
6
‐‐
‐‐
VDS = 20V, ID = 1mA, f = 1kHz
Click To Buy
gos
Output Conductance
Drain to Source On Resistance
Input Capacitance
25
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
30
‐‐
µS
VDS = 20V, ID = 1mA, f = 1kHz
VGS = 0V, ID = 0A, f = 1kHz
rds(on)
Ciss
‐‐
Ω
13
3.6
3.5
3.1
3
VDS = 20V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = ‐5V, f = 1MHz
VDS = 0V, VGS = ‐7V, f = 1MHz
VDS = 0V, VGS = ‐12V, f = 1MHz
VDS = 10V, ID = 10mA, f = 1kHz
Crss
‐‐
pF
Reverse Transfer Capacitance
Crss
‐‐
Crss
‐‐
en
Equivalent Input Noise Voltage
‐‐
nV/√Hz
LS4391 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
TYP
2
MIN
‐‐
MAX
‐‐
UNITS
CONDITIONS
Turn On Time
2
‐‐
‐‐
ns
VDD = 10V, VGS(H) = 0V
td(off)
tf
6
‐‐
‐‐
Turn Off Time
13
‐‐
‐‐
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
LS4391 SWITCHING CIRCUIT PARAMETERS
SWITCHING CIRCUIT
VGS(L)
RL
‐12V
800Ω
12mA
SOT-23 (Top View)
Micross Components Europe
ID(on)
Available Packages:
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
LS4391 in SOT-23
LS4391 in bare die.
Contact Micross for full package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
5秒后页面跳转
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
