LS4393
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix PN4393
FEATURES
The LS4393 features many of the superior
DIRECT REPLACEMENT FOR SILICONIX PN4393
LOW ON RESISTANCE
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
rDS(on) ≤ 100Ω
ID(off) = 5pA
t(ON) ≤= 15ns
LOW GATE OPERATING CURRENT
FAST SWITCHING
LS4393 Benefits:
ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)
Low Error Voltage
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage / Gate to Source Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
‐65°C to +200°C
‐55°C to +200°C
350mW
LS4393 Applications:
Analog Switches
Choppers, Sample-and-Hold
Normally “On” Switches, Current Limiters
IG = 50mA
‐40V
LS4393 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
VDS(on)
VDS(on)
VDS(on)
IDSS
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source On Voltage
Drain to Source On Voltage
Drain to Source On Voltage
Drain to Source Saturation Current2
Gate Reverse Current
MIN
‐40
‐0.5
‐‐
‐‐
‐‐
‐‐
5
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
0.25
0.3
0.35
‐‐
‐5
‐5
5
5
MAX
‐‐
‐3
1
0.4
‐‐
UNITS
V
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 20V, ID = 1nA
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
VDS = 20V, VGS = 0V
VGS = ‐20V, VDS = 0V
VDG = 15V, ID = 10mA
‐‐
60
‐1000
‐‐
100
‐‐
mA
pA
IGSS
IG
Gate Operating Current
‐‐
‐‐
‐‐
‐‐
VDS = 20V, VGS = ‐5V
ID(off)
Drain Cutoff Current
VDS = 20V, VGS = ‐7V
VDS = 20V, VGS = ‐12V
VGS = 0V, ID = 1mA
5
‐‐
‐‐
100
rDS(on)
Drain to Source On Resistance
Ω
LS4393 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
UNITS
CONDITIONS
Click To Buy
gfs
Forward Transconductance
6
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
mS
µS
Ω
VDS = 20V, ID = 1mA, f = 1kHz
VDS = 20V, ID = 1mA, f = 1kHz
VGS = 0V, ID = 0A, f = 1kHz
gos
Output Conductance
25
‐‐
‐‐
rds(on)
Ciss
Drain to Source On Resistance
Input Capacitance
100
16
5
12
3.5
3.4
3.0
3
VDS = 20V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = ‐5V, f = 1MHz
VDS = 0V, VGS = ‐7V, f = 1MHz
VDS = 0V, VGS = ‐12V, f = 1MHz
VDS = 10V, ID = 10mA, f = 1kHz
Crss
pF
Reverse Transfer Capacitance
Crss
‐‐
Crss
‐‐
en
Equivalent Input Noise Voltage
‐‐
nV/√Hz
LS4393 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
TYP
2
MIN
‐‐
MAX
15
5
UNITS
CONDITIONS
Turn On Time
2
‐‐
ns
VDD = 10V, VGS(H) = 0V
td(off)
tf
6
‐‐
50
30
Turn Off Time
13
‐‐
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
LS4393 SWITCHING CIRCUIT PARAMETERS
SWITCHING CIRCUIT
VGS(L)
RL
‐5V
3200Ω
3mA
TO-92 (Bottom View)
Micross Components Europe
ID(on)
Available Packages:
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
LS4393 in TO-92
LS4393 in bare die.
Contact Micross for full package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
5秒后页面跳转
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
