Datasheet > LS4416A_SOT-23

LS4416A_SOT-23

更新时间： 2024-11-02 11:43:43

品牌	Logo	应用领域
MICROSS		放大器
页数	文件大小	规格书
1页	281K
描述
N-Channel high frequency JFET amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LS4416A_SOT-23 数据手册

LS4416A

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N4416A

The LS4416A is a N-Channel high frequency JFET amplifier

FEATURES

The LS4416A N-channel JFET is designed to provide

DIRECT REPLACEMENT FOR SILICONIX LS4416A

EXCEPTIONAL GAIN (400 MHz)

VERY LOW NOISE FIGURE (400 MHz)

VERY LOW DISTORTION

high-performance amplification at high frequencies.

10dB (min)

4dB (max)

The SOT-23 package provides ease of manufacturing,

and a lower cost assembly option.

HIGH AC/DC SWITCH OFF‐ISOLATION

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

LS4416A Benefits:

Wideband High Gain

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain or Gate to Source

Very High System Sensitivity

High Quality of Amplification

High-Speed Switching Capability

High Low-Level Signal Amplification

‐65°C to +200°C

‐55°C to +135°C

300mW

10mA

‐35V

LS4416A Applications:

High-Frequency Amplifier / Mixer

Oscillator

Sample-and-Hold

Very Low Capacitance Switches

LS4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

I_GSS

g_fs

g_os

C_iss

C_rss

C_oss

CHARACTERISTIC

MIN

‐35

‐2.5

‐‐

4500

‐‐

TYP.

‐‐

MAX

‐‐

‐6

UNITS

µS

nV/√Hz

CONDITIONS

I_G= ‐1µA, V_DS= 0V

V_DS= 15V, I_D= 1nA

V_DS= 15V, V_GS= 0V

V_GS= ‐20V, V_DS= 0V

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Saturation Current

Gate Leakage Current

‐0.1

7500

0.8

Forward Transconductance

V_DS= 15V, V_GS= 0V, f = 1kHz

Output Conductance

Click To Buy

Input Capacitance

Reverse Transfer Capacitance²

V_DS= 15V, V_GS= 0V, f = 1MHz

V_DS= 10V, V_GS= 0V, f = 1kHz

CONDITIONS

Output Capacitance²

‐‐

e_n

Equivalent Input Noise Voltage

LS4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

100 Mhz

MIN

400 Mhz

MIN MAX

UNITS

MAX

100

2500

g_Iss

b_Iss

Input Conductance

Input Susceptance²

Output Conductance

Output Susceptance²

Forward Transconductance

Power Gain²

‐‐

1000

10000

100

4000

‐‐

µS

V_DS= 15V, V_GS= 0V

g_oss

‐‐

b_oss

G_fs

‐‐

1000

‐‐

4000

‐‐

G_ps

‐‐

V_DS= 15V, I_D= 5mA

Noise Figure²

V_DS= 15V, I_D= 5mA, R_G= 1kΩ

NOTES

1 . Absolute maximum ratings are limiting values above which LS4416A serviceability may be impaired.

2. Not production tested, guaranteed by design

Micross Components Europe

Available Packages:

LS4416A in SOT-23

LS4416A in bare die.

SOT-23 (Top View)

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

中文翻译

下载PDF

与LS4416A_SOT-23相关器件

型号	品牌	获取价格	描述	数据表
LS4416A_TO-18	MICROSS	获取价格	N-Channel high frequency JFET amplifier
LS4416A_TO-92	MICROSS	获取价格	N-Channel high frequency JFET amplifier
LS4416A-TO-18	MICROSS	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, HERMETIC SEALED PACKAGE-3, FET Genera
LS4416A-TO-72	MICROSS	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72,
LS4416A-TO-92	MICROSS	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,
LS4416-TO-72	MICROSS	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72,
LS4416-TO-92	MICROSS	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,
LS4448	GOOD-ARK	获取价格	Fast Switching Diode
LS4448	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR DIODE
LS4448	DIOTEC	获取价格	Surface Mount Small Signal Diodes

与LS4416A_SOT-23相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

6
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

3
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

LS4416A_SOT-23

LS4416A_SOT-23 数据手册

与LS4416A_SOT-23相关器件

与LS4416A_SOT-23相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LS4416A_SOT-23

LS4416A_SOT-23 数据手册

与LS4416A_SOT-23相关器件

与LS4416A_SOT-23相关文章

您还可以找

您在本页遇到什么问题？