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LS4416

更新时间: 2024-11-02 11:43:43
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描述
N-Channel high frequency JFET amplifier

LS4416 数据手册

  
LS4416  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix 2N4416  
The LS4416 is a N-Channel high frequency JFET amplifier  
FEATURES  
The LS4416 N-channel JFET is designed to provide  
DIRECT REPLACEMENT FOR SILICONIX 2N4416  
EXCEPTIONAL GAIN (400 MHz)  
VERY LOW NOISE FIGURE (400 MHz)  
VERY LOW DISTORTION  
high-performance amplification at high frequencies.  
10dB (min)  
4dB (max)  
The SOT-23 package provides ease of manufacturing,  
and a lower cost assembly option.  
HIGH AC/DC SWITCH OFFISOLATION  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
LS4416 Benefits:  
ƒ
ƒ
ƒ
ƒ
ƒ
Wideband High Gain  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain or Gate to Source  
Very High System Sensitivity  
High Quality of Amplification  
High-Speed Switching Capability  
High Low-Level Signal Amplification  
65°C to +200°C  
55°C to +135°C  
300mW  
10mA  
30V  
LS4416 Applications:  
ƒ
ƒ
ƒ
ƒ
High-Frequency Amplifier / Mixer  
Oscillator  
Sample-and-Hold  
Very Low Capacitance Switches  
LS4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IDSS  
IGSS  
gfs  
gos  
Ciss  
Crss  
Coss  
CHARACTERISTIC  
MIN  
30  
‐‐  
5
‐‐  
4500  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
6
MAX  
‐‐  
6  
UNITS  
V
V
mA  
nA  
µS  
µS  
pF  
pF  
pF  
nV/Hz  
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 15V, ID = 1nA  
VDS = 15V, VGS = 0V  
VGS = 15V, VDS = 0V  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Saturation Current  
Gate Leakage Current  
15  
1.0  
7500  
50  
0.8  
4
Forward Transconductance  
VDS = 15V, VGS = 0V, f = 1kHz  
Output Conductance  
2
Click To Buy  
Input Capacitance  
Reverse Transfer Capacitance2  
VDS = 15V, VGS = 0V, f = 1MHz  
VDS = 10V, VGS = 0V, f = 1kHz  
CONDITIONS  
Output Capacitance2  
2
‐‐  
en  
Equivalent Input Noise Voltage  
LS4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTIC  
100 Mhz  
MIN  
400 Mhz  
MIN MAX  
UNITS  
MAX  
100  
2500  
75  
gIss  
bIss  
Input Conductance  
Input Susceptance2  
Output Conductance  
Output Susceptance2  
Forward Transconductance  
Power Gain2  
‐‐  
‐‐  
1000  
10000  
100  
4000  
‐‐  
‐‐  
‐‐  
µS  
VDS = 15V, VGS = 0V  
goss  
‐‐  
‐‐  
boss  
Gfs  
‐‐  
1000  
‐‐  
‐‐  
‐‐  
4000  
10  
‐‐  
Gps  
18  
‐‐  
‐‐  
‐‐  
dB  
VDS = 15V, ID = 5mA  
NF  
Noise Figure2  
2
4
VDS = 15V, ID = 5mA, RG = 1kΩ  
NOTES  
1 . Absolute maximum ratings are limiting values above which LS4416 serviceability may be impaired.  
2. Not production tested, guaranteed by design  
Micross Components Europe  
Available Packages:  
LS4416 in SOT-23  
LS4416 in bare die.  
SOT-23 (Top View)  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed  
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, HERMETIC SEALED PACKAGE-3, FET Genera