Datasheet > LS313

LS313

更新时间： 2024-11-14 22:31:03

品牌	Logo	应用领域
Linear Systems		晶体晶体管
页数	文件大小	规格书
2页	30K
描述
MONOLITHIC DUAL NPN TRANSISTORS

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数据手册

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LS313 数据手册

LS310 LS311 LS312 LS313

MONOLITHIC DUAL

NPN

Linear Integrated Systems

TRANSISTORS

FEATURES

VERY HIGH GAIN

TIGHT V_BEMATCHING

HIGH f_T

h_FE≥ 200 @ 10µA-1mA

|V_BE1-V_BE2| = 0.2mV TYP.

250MHz TYP. @ 1mA

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25°C (unless otherwise noted)

I_C

Collector Current

10mA

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65° to +200°C

+150°C

B1 E1 E2 B2

26 X 29 MILS

Maximum Power Dissipation

Device Dissipation @ Free Air

Linear Derating Factor

ONE SIDE

250mW

2.3mW/°C

BOTH SIDES

500mW

BOTTOM VIEW

4.3mW/°C

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL CHARACTERISTICS LS310 LS311 LS312 LS313

UNITS CONDITIONS

BV_CBO

BV_CEO

BV_EBO

BV_CCO

h_FE

Collector to Base Voltage

Collector to Emitter Voltage

Emitter-Base Breakdown Voltage

Collector to Collector Voltage

DC Current Gain

6.2

MIN.

I_C= 10µA I_E= 0

I_C= 10µA I_B= 0

6.2

100

150

6.2

100

200

I_E= 10µA

I_C= 0

NOTE 2

100 MIN.

I_C= 10µA I_E= 0

150

400 MIN.

1000 MAX.

400 MIN.

I_C= 10µA V_CE= 5V

h_FE

DC Current Gain

150

0.25

0.2

150

0.25

0.2

200

0.25

0.2

I_C= 100µA V_CE= 5V

400 MIN.

0.25 MAX.

I_C= 1mA

I_E= 0

V_CE= 5V

V_CE(SAT) Collector Saturation Voltage

I_B= 0.1mA

V_CB= NOTE 3

V_CB= 3V

I_CBO

I_EBO

C_OBO

C_C1C2

I_C1C2

f_T

Collector Cutoff Current

0.2

MAX. nA

MAX. pF

MAX. nA

Emitter Cutoff Current

I_E= 0

Output Capacitance

I_E= 0

V_CB= 5V

Collector to Collector Capacitance

Collector to Collector Leakage Current

Current Gain Bandwidth Product

Narrow Band Noise Figure

V_CC= 0

0.5

200

0.5

200

0.5

200

0.5

V_CC= NOTE 4

V_CE= 5V

200 MIN. MHz I_C= 1mA

MAX. dB

I_C= 100µA V_CE= 5V

BW = 200Hz, R_G= 10 KΩ

f=1KHz

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261

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