LS320
HIGH INPUT IMPEDANCE
BiFET AMPLIFIER
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH TRANSCONDUCTANCE
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
rGs = 100GΩ
YFS = 30,000µS
TO-72
BOTTOM VIEW
-65 to +150 °C
-55 to +125 °C
S
S
2
1
3
4
D
G
200mW
Drain Current
ID = 25mA
Maximum Voltages
Drain to Source1
Gate to Source
VDSO = 20V
VGSS = 20V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN
-20
-12
TYP MAX UNITS CONDITIONS
VDS
VGS
gfs
goss
rGs
Drain to Source Voltage
Gate to Source Voltage
Common Source Forward Transconductance 30,000
Common Source Output Conductance
Gate to Source Input Resistance
Input Capacitance
V
V
IDS = 100µA, VGS = 0V
-10
-7
IDS = 10mA, Vgs = -10V2,3
IDS = 10mA, VDS = -10V, f = 1kHz
IDS = 10mA, VDS = -10V, f = 1kHz
VGS = 0 to 20V, TJ to 125 °C
IDS = 10mA, VDS = -10V
µS
µS
GΩ
pF
pF
300
100
CISS
CRSS
8
Reverse Transfer Capacitance
1.5
IDS = 10mA, VDS = -10V
IDS = 10mA, VDS = 10V
BW = 50 to 15kHz
en
Noise Voltage
25
µV
PACKAGE OPTIONS
FUNCTIONAL SCHEMATIC
SOT-23
TOP VIEW
TO-92
BOTTOM VIEW
D
S
1
D
3
G
S
D S G
2
G
1
2 3
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. The gate to source voltage must never exceed 100V, t < 10ms.
3. Additional screening available
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261