LS313
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
FEATURES
HIGH GAIN
The LS313 is a monolithic pair of NPN transistors
hFE ≥ 400 @ 10µA‐1mA
|VBE1 – VBE2 |= 0.2mV TYP.
250MHz TYP. @ 1mA
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
Maximum Temperatures
Storage Temperature
(See Packaging Information).
‐65°C to +200°C
‐55°C to +150°C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
LS313 Features:
250mW
500mW
2.3mW/°C
4.3mW/°C
Very high gain
Tight matching
Low Output Capacitance
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VBE1 – VBE2
∆|(VBE1 – VBE2)| / ∆T
CHARACTERISTIC
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
MIN
‐‐
‐‐
TYP
0.4
1
MAX
1
5
UNITS
mV
µV/°C
CONDITIONS
|
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
|IB1 – IB2
|
‐‐
‐‐
1.25
5
nA
|∆ (IB1 – IB2)|/°C
Base Current Differential
Change with Temperature
DC Current Gain Differential
‐‐
0.5
nA/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
hFE1 /hFE2
‐‐
5
‐‐
%
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Click To Buy
SYMBOL
BVCBO
BVCEO
BVEBO
BVCCO
CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter‐Base Breakdown Voltage
Collector to Collector Voltage
MIN.
45
45
6.2
100
400
400
400
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
1000
‐‐
‐‐
UNITS
CONDITIONS
IC = 10µA, IE = 0
V
V
V
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 1mA, IB = 0.1mA
IE = 0, VCB = 3V
hFE
DC Current Gain
VCE(SAT)
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
‐‐
‐‐
‐‐
‐‐
0.25
0.2
0.2
2
V
nA
nA
pF
‐‐
‐‐
‐‐
IE = 0, VCB = 30V
IE = 0, VCB = 5V
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
‐‐
‐‐
200
‐‐
‐‐
‐‐
‐‐
‐‐
2
0.5
‐‐
pF
VCC = 0V
VCC = ±100V
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
nA
MHz
dB
NF
3
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS313 in P-DIP
LS313 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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