Datasheet > LS318

LS318

更新时间： 2024-11-14 22:31:03

品牌	Logo	应用领域
Linear Systems		晶体晶体管
页数	文件大小	规格书
2页	30K
描述
LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS

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LS318 数据手册

LS318

LOG CONFORMANCE

MONOLITHIC DUAL

NPN

Linear Integrated Systems

TRANSISTORS

FEATURES

LOG CONFORMANCE

∆re =1Ω TYP.

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25°C (unless otherwise noted)

I_C

Collector Current

10mA

Maximum Temperatures

Storage Temperature Range

Operating Junction Temperature

-65°C to +200°C

+150°C

B1 E1 E2 B2

26 X 29 MILS

Maximum Power Dissipation

Device Dissipation @ Free Air

Linear Derating Factor

ONE SIDE

250mW

2.3mW/°C

BOTH SIDES

500mW

BOTTOM VIEW

4.3mW/°C

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

LS318

1.5

UNITS CONDITIONS

∆re

Log Conformance

MAX.

MIN.

Ω

I_C= 10-100-1000µA

V_CE= 5V

BV_CBO

BV_CEO

BV_EBO

BV_CCO

h_FE

Collector-Base Breakdown Voltage

Collector to Emitter Voltage

Emitter-Base Breakdown Voltage

Collector to Collector Voltage

DC Current Gain

I_C= 10µA

I_E= 10µA

I_C= 10µA

I_E= 0

I_B= 0

6.2

I_C= 0

NOTE 2

I_E= 0

150

600

150

600

150

MIN.

MAX.

MIN.

MAX.

MIN.

V_CE= 5V

h_FE

DC Current Gain

I_C= 100µA

V_CE= 5V

h_FE

DC Current Gain

I_C= 1mA

V_CE= 5V

V_CE(SAT)

I_CBO

I_EBO

Collector Saturation Voltage

Collector Cutoff Current

0.25

0.2

MAX.

MIN.

I_C= 1mAI_B= 0.1 mA

MHz

I_E= 0

V_CB= 20V

Emitter Cutoff Current

I_C= 0

V_EB= 3V

V_CB= 3V

C_OBO

C_C1C2

I_C1C2

f_T

Output Capacitance

I_E= 0

Collector to Collector Capacitance

Collector to Collector Leakage Current

Current Gain Bandwidth Product

Narrow Band Noise Figure

V_CC= 0

V_CC= ±45V

I_C= 1mA

I_C= 100µA

0.5

200

V_CE= 5V

MAX.

BW = 200Hz

f=1KHz

R_G= 10 KΩ

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261

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