Datasheet > LP750P100

LP750P100

更新时间： 2024-09-24 22:08:03

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	52K
描述
PACKAGED 0.5 WATT POWER PHEMT

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技术参数
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LP750P100 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.74	配置：	SINGLE
最小漏源击穿电压：	8 V	FET 技术：	HIGH ELECTRON MOBILITY
最高频带：	X BAND	JESD-30 代码：	R-CDFM-F2
元件数量：	1	端子数量：	2
工作模式：	DEPLETION MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

LP750P100 数据手册

LP 7 5 0 P 1 0 0

P ACKAGED 0 .5 WATT P OWER P HEMT

FEATURES

41 dBm IP3 at 12 GHz

27.5 dBm P-1dB at 12 GHz

10.5 dB Power Gain at 12 GHz

2.5 dB Noise Figure at 12 GHz

60% Power-Added-Efficiency

DES CRIP TION AND AP P LICATIONS

The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide

(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an

Electron-Beam direct-write 0.25 mm Schottky barrier gate. The recessed “mushroom” gate structure

minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have

been optimized for reliable high-power/low-noise applications. The LP750 also features Si₃N₄

passivation and is available in die form or in surface-mount packages.

The LP750P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

ELECTRICAL S P ECIFICATIONS @ T_{Am b ie n t}= 2 2 ± 3 °C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Output Power @

1 dB Compression

P_1dB

f = 12GHz; V_DS= 8V; I_DS= 50% I_DSS

26.0

27.5

dBm

Power Gain @

G_1dB

f = 12GHz; V_DS= 8V; I_DS= 50% I_DSS

9.0

10.5

1 dB Compression

Maximum Available Gain

Noise Figure

MAG

f = 12GHz; V_DS= 8V; I_DS= 50% I_DSS

f = 12GHz; V_DS= 5V; I_DS= 33% I_DSS

14.0

2.5

Power-Added Efficiency

f = 12GHz; V_DS= 5V; I_DS= 50% I_DSS

P_OUT= 25dBm

;

Output Intercept Point

IP₃

dBm

f = 12GHz; V_DS= 8V; I_DS= 50% I_DSS

P_OUT= 10dBm

;

Saturated Drain-Source Current

Transconductance

I_DSS

G_M

V_P

V_DS= 2V; V_GS= 0V

V_DS= 2V; I_DS= 4mA

I_GD= 4mA

180

230

-2.0

265

280

-1.2

Pinch-Off Voltage

-0.25

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

|V_BDGS

|I_GSL

Gate-Source Breakdown

Voltage Magnitude

I_GS= 4mA

V_GS= -5V

Gate-Source Leakage

Current Magnitude

P h o n e : (408) 988-1845

Fa x: (408) 970-9950

h ttp :// www.filtronicsolidstate.com

Re vis e d : 03/02/01

Em a il: sales@filss.com

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