Datasheet > LN66NC(LN66(NC))

LN66NC(LN66(NC))

更新时间： 2024-10-19 23:47:35

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其他 - ETC		光电光电器件二极管
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描述
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes

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中文翻译

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LN66NC(LN66(NC)) 数据手册

Infrared Light Emitting Diodes

LN66NC (LN66(NC))

GaAs Infrared Light Emitting Diode

Unit : mm

ø5.0±0.2

For optical control systems

Features

High-power output, high-efficiency :P_O= 8 mW (typ.)

Emitted light spectrum suited for silicon photodetectors

Good radiant power output linearity with respect to input current

Wide directivity : θ = 25 deg. (typ.)

2-1.0±0.15

2-0.6±0.15

Dark blue resin package

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

160

Unit

1: Cathode

2: Anode

Power dissipation

P_D

I_F

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

100

I_FP

1.5

V_R

T_opr

T_stg

–25 to +85

– 40 to+100

˚C

f = 100 Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

Conditions

min

typ

max

Unit

P_O

I_F= 50mA

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

Half-power angle

λ_P

∆λ

V_F

I_R

I_F= 50mA

950

I_F= 50mA

I_F= 100mA

1.3

1.6

V_R= 3V

µA

C_t

V_R= 0V, f = 1MHz

The angle in which radiant intencity is 50%

deg.

^*P_OClassifications

Class

P_O(mW)

5 to 8

Note) The part number in the parenthesis shows conventional part number.

12 3 4

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